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Superconducting tunnel junctions with layered superconductors

Superconducting tunnel junctions (STJs), being an efficient approach to investigating the quantum tunneling processes of quasiparticles in superconductors, can serve as an extraordinary platform for exploring novel electronic states and strong correlation phenomena of condensed matters [1–7].The technological appeal of STJs is the exceptional sensitivity,

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Tunneling current in HfO2 and Hf0.5Zr0.5O2-based ferroelectric tunnel

Ferroelectric tunnel junctions (FTJ) are promising for future lower power memory and neuromorphic computing applications. 1 The resistive switching of the FTJs is based on the abrupt change of current when the spontaneous polarization direction in ferroelectric (FE) material changes under external electric field. The carrier transport is dominated by quantum

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Applications

JJs are building blocks for sensors, quantum computers, and high-performance or energy-efficient classical computers. A JJ occurs when a continuous superconductor is interrupted by a non-superconducting barrier, such as an insulator or semiconductor. If the barrier is small enough, electrons can quantum tunnel through the barrier without

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Magnetic Tunnel Junctions – Nanoscience and Nanotechnology II

The data are taken at room temperature. The arrows indicate the orientation of the CoFeB magnetization. Adapted from Lee Y M, Hayakawa J, Ikeda S, Matsukura F, Ohno H 2007 Effect of electrode composition on the tunnel magnetoresistance of pseudospin-valve magnetic tunnel junction with a MgO tunnel barrier. Appl. Phys. Lett. 90 (3), 212507.

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Two-dimensional antiferroelectric tunnel junction

Two-dimensional antiferroelectric tunnel junction . Jun Ding, Lincoln, Nebraska 68588-0299, USA . 2. College of Science, Henan University of Engineering, Zhengzhou 451191, People''s Republic of China . Using quantum-mechanical modeling of the electronic transport, we explore in-plane and out-of-plane tunneling across the

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Quantum transport simulations of α-In2Se3 antiferroelectric tunnel

Due to semiconductor characteristics and non-volatile ferroelectricity, two-dimensional (2D) In 2 Se 3 are considered as potential candidates for next-generation storage and computing devices. Based on first principles calculations, we designed antiferroelectric tunnel junctions (AFTJs) using α-In 2 Se 3 as channels. The tunneling barrier height is controlled by the antiferroelectric to

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Tunnel Junction: Quantum Tunneling for Nanoelectronics and

A tunnel junction is a nanoscale device that consists of two conductive electrodes separated by a thin insulating barrier. The barrier is thin enough to allow electrons to quantum mechanically tunnel through it, enabling current to flow between the electrodes. data storage, and quantum computing. an electron with insufficient energy

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Lecture 20: Quantum Tunneling of Electrons

A ''quantum'' particle can go over energy barriers even at T=0K. Thus, the classical rate equation does not strictly apply, especially as we go to low temperatures. As mentioned particles to sometimes tunnel through the barrier from a lower energy, rather than diffusing randomly over the top, as required by classical statistical mechanics

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Quantum Plasmon Resonances Controlled by Molecular Tunnel

Controlled by Molecular Tunnel Junction Abstract Quantum tunneling between two plasmonic resonators links non-linear quantum optics with terahertz nanoelectronics. Direct observation of and control over quantum plasmon resonances at length scales in the range 0.4–1.3 nm across molecular tunnel junctions made of two plasmonic resonators bridged by

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GaN-based Bipolar Cascade Lasers with 25nm wide Quantum

TJ – tunnel junction, EBL – electron blocker layer, QW – quantum well II. DEVICE DETAILS The reference device is a blue light emitting laser diode featuring two InGaN single-quantum well active regions that are separated by an InGaN tunnel junction.7 A second tunnel junction is grown on top for uniform carrier injection. The full

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Magnetic tunnel junction random number generators

3University of Tennessee, Knoxville, Knoxville, TN, United States of America E-mail: incorvia@utexas Received 19 November 2023, revised 30 January 2024 Accepted for publication 5 April 2024 Published 23 April 2024 Abstract Perpendicular magnetic tunnel junction (pMTJ)-based true-random number generators (RNGs)

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Si-Doped HfO2-Based Ferroelectric Tunnel Junctions with a

Ferroelectric tunnel junctions (FTJs) have attracted attention as devices for advanced memory applications owing to their high operating speed, low operating energy, and excellent scalability. In particular, hafnia ferroelectric materials are very promising because of their high remanent polarization (below 10 nm) and high compatibility with complementary metal

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In-Plane Ferroelectric Tunnel Junction

In-Plane Ferroelectric Tunnel Junction Huitao Shen,1,* Junwei Liu,2 Kai Chang,3 and Liang Fu1 1Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA 2Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, ries with a low energy consumption and high performance are

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Experimental and Modeling Study on the High

Keywords: tunnel junction; MOCVD; quantum well; co-doping; solar cells 1. Introduction Solar energy is a renewable and environmentally friendly source of energy. Efforts to generate greater electric power from solar energy have benefited from

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Double quantum-well tunnel junctions with high peak tunnel

Lattice matched InAlGaAs tunnel junctions with a 1.18 eV bandgap have been grown for a triple-junction solar cell on InP. By including two InGaAs quantum wells in the structure, a peak tunnel current density of 113 A/cm2 was observed, 45 times greater than the baseline bulk InAlGaAs tunnel junction. The differential resistance of the quantum well device is 7.52 × 10−4 Ω cm2, a

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Enhanced efficiency in bottom tunnel junction InGaN blue LEDs

For metal-polar growth, as Figure 1 shows, there are then two possibilities for orienting the diode and tunnel junction; n-i-p-n with the tunnel junction on the top, or n-p-i-n with the tunnel junction at the bottom. It has recently been shown that the bottom tunnel junction (BTJ) enhances performance in +c-plane InGaN blue LEDs10-11. In

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arXiv:2408.06462v2 [cond-mat.mes-hall] 5 Sep 2024

Josephson tunnel junction arrays and Andreev weak links: linked by a single energy-phase relation A. Mert Bozkurt∗ Kavli Institute of Nanoscience and QuTech, Delft University of Technology, P.O. Box 4056, 2600 GA Delft, The Netherlands Valla Fatemi† School of Applied and Engineering Physics, Cornell University, Ithaca, NY, 14853, USA

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Two-Dimensional Antiferroelectric Tunnel Junction

Ferroelectric tunnel junctions (FTJs), which consist of two metal electrodes separated by a thin ferroelectric barrier, have recently aroused significant interest for technological applications as nanoscale resistive switching devices. So far, most existing FTJs have been based on perovskite-oxide barrier layers. The recent discovery of the two-dimensional (2D)

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Dynamics of Multi-Domains in Ferroelectric Tunnel Junction

(depolarization energy density+free energy density+gradient energy density). Furthermore, the impact of the bottom insulator layer on ferroelectric''s gradient energy is also studied. INTRODUCTION A ferroelectric tunnel junction (FTJ) utilizes the mechanism of quantum tunneling to switch between bi-stable states 1 34. To explore the microscopic

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Quantum biological tunnel junction for electron transfer imaging

Quantum biological tunnel junction for electron transfer imaging in live cells USA. 3 Department of Bioengineering, University of California at Berkeley, Berkeley, CA 94720, USA. 4 Biomedical Institute for Global Health Research and Technology, National University of Singapore, Singapore 117599, Singapore. 5 Department of Bio-convergence

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About Tunnel junction quantum energy storage usa

About Tunnel junction quantum energy storage usa

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6 FAQs about [Tunnel junction quantum energy storage usa]

Are ferroelectric tunnel junctions a reliable non-volatile memory?

The results show high potential towards multi-level and reliable non-volatile memories. The authors report ferroelectric tunnel junctions based on samarium-substituted layered bismuth oxide, which show tunnelling electroresistance of 7 × 105 and high endurance over 5 billion cycles, even when the film is down to one nanometer.

Is tunnelling electroresistance over 109 a reliable nonvolatile memory?

Furthermore, tunnelling electroresistance over 109 is achieved in ferroelectric tunnel junctions with 4.6-nanometer samarium-substituted bismuth oxide layer, which is higher than commercial flash memories. The results show high potential towards multi-level and reliable non-volatile memories.

Who are the authors of giant tunneling electroresistance in two-dimensional ferroelectric tunnel junctions?

Lili Kang, Peng Jiang, Hua Hao, Yanhong Zhou, Xiaohong Zheng, Lei Zhang, Zhi Zeng. Giant tunneling electroresistance in two-dimensional ferroelectric tunnel junctions with out-of-plane ferroelectric polarization.

Can ferroelectric tunnel junctions maintain high electroresistance?

Ferroelectric tunnel junctions are promising towards high-reliability and low-power non-volatile memories and computing devices. Yet it is challenging to maintain a high tunnelling electroresistance when the ferroelectric layer is thinned down towards atomic scale because of the ferroelectric structural instability and large depolarization field.

Are ferroelectric tunnel junctions based on perovskite-oxide barrier layers?

So far, most existing FTJs have been based on perovskite-oxide barrier layers. The recent discovery of the two-dimensional (2D) van der Waals ferroelectric materials opens a new route to realize tunnel junctions with new functionalities and nm-scale dimensions.

Why are two-dimensional ferroelectric materials a new route to nm-scale tunnel junctions?

The recent discovery of the two-dimensional (2D) van der Waals ferroelectric materials opens a new route to realize tunnel junctions with new functionalities and nm-scale dimensions. Because of the weak coupling between the atomic layers in these materials, the relative dipole alignment between them can be controlled by applied voltage.

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